Quality Improvement of 4″ 4H-SiC Crystal by Using Modified Seed Adhesion Method
- 著者名:
J.W. Choi J.H. Park J.D. Seo J.G. Kim M.O. Kyun K.R. Ku H.J. Kim D.H. Lee Y.S. Jang W.J. Lee - 掲載資料名:
- Silicon Carbide and Related Materials 2016
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 897
- 発行年:
- 2017
- 開始ページ:
- 11
- 終了ページ:
- 14
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9783035710434 [3035710430]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
3
国際会議録
High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design
Trans Tech Publications |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
Trans Tech Publications |
11
国際会議録
Spectral Response Modification of Quantum Well Infrared Photodetector by Quantum Well Intermixing
Materials Research Society |
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |