Reduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled Seeds

Reduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled Seeds

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

7

終了ページ:

10

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

類似資料:

1 国際会議録 Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method E.N. Mokhov, S.S. Nagalyuk, V.A. Soltamov Trans Tech Publications	7 国際会議録 Characterization of Second-Phase Inclusion in Silicon Carbide Powders T.C. Hsiao, S. Tsao, S. Nagalyuk, E. Mokhov Trans Tech Publications
2 国際会議録 Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method E.N. Mokhov, S.S. Nagalyuk Trans Tech Publications	8 国際会議録 Eleetron Paramaguetic Resonance of Erbium in Bulk Silicon Carbide Crystals Baranov,P.G., Ilyin,I.V., Mokhov,E.N. Trans Tech Publications
3 国際会議録 Sublimation Growth of Bulk AlN Crystals on SiC Seeds E.N. Mokhov, A.A. Wolfson, A.O. Avdeev, S.S. Nagalyuk, D.P. Litvin Trans Tech Publications	9 国際会議録 Electron paramagnetic resonance of erbium in bulk silicon carbide crystals Baranov,P.G., Ilyin,I.V., Mokhov,E.N. Trans Tech Publications
4 国際会議録 Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals M. Dudley, S. Byrappa, H. Wang, F. Wu, Y. Zhang, B. Raghothamachar, G. Choi, E.K. Sanchez, D. Hansen, R. Drachev, M.J. … Materials Research Society	10 国際会議録 Effect of Neutron Irradiation on SiC Etching in KOH Melt E.N. Mokhov, O.P. Kazarova, S.S. Nagalyuk Trans Tech Publications
5 国際会議録 Synchrotron X-Ray Study on Crack Prevention in AlN Crystals Grown on Gradually Decomposing SiC Substrates T.S. Argunova, M.Y. Gutkin, O.P. Kazarova, E.N. Mokhov, S.S. Nagalyuk Trans Tech Publications	11 国際会議録 Status of 3″ 6H SiC Bulk Crystal Growth Y.N. Makarov, D.P. Litvin, A.V. Vasiliev, A.S. Segal, S.S. Nagalyuk Trans Tech Publications
6 国際会議録 Deep-Level Defects in AlN Single Crystals: EPR Studies I.V. Ilyin, A.A. Soltamova, V.A. Soltamov, V.A. Khramtsov, E.N. Mokhov Trans Tech Publications	12 国際会議録 Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H₂ Etching X.F. Chen, F.S. Zhang, X.L. Yang, Y. Peng, X.J. Xie, T. Li, X.B. Hu, X.G. Xu, G.L. Li, R.Q. Wang Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12