Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping

Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping

著者名:

H. Suo

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

3

終了ページ:

6

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

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1 国際会議録 Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping K. Eto, H. Suo, T. Kato, H. Okumura Trans Tech Publications	7 国際会議録 Improvement of Quality of Thick 4H-SiC Epilayers A. Miyasaka, K. Kojima, K. Momose, H. Osawa, H. Okumura Trans Tech Publications
2 国際会議録 Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique T. Kato, K. Eto, S. Takagi, T. Miura, Y. Urakami Trans Tech Publications	8 国際会議録 Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity T. Shirai, K. Danno, A. Seki, H. Sakamoto, T. Bessho Trans Tech Publications
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