The application criterion of model-based optical proximity correction in a low k1 process

The application criterion of model-based optical proximity correction in a low k1 process

著者名:

Doo-Youl Lee

掲載資料名:

Optical microlithography XVIII : 1-4 March, 2005, San Jose, California, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5754

発行年:

2005

パート:

2

開始ページ:

821

終了ページ:

828

総ページ数:

8

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457349 [0819457345]

言語:

英語

請求記号:

P63600/5754

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014979
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Advances in resist technology and processing
回次:	2005 : 18th
会議開催地:	San Jose, CA, USA
会議開催年:	2005.03.01-2005.03.04
論文注記:	18th Optical microlithography,1-4 March, 2005, San Jose, California, USA

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