Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors
- 著者名:
- 掲載資料名:
- Optoelectronic integrated circuit materials, physics, and devices : 6-9 February 1995, San Jose, California
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 2397
- 発行年:
- 1995
- 開始ページ:
- 418
- 終了ページ:
- 429
- 総ページ数:
- 12
- 出版情報:
- Bellingham, WA: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819417442 [0819417440]
- 言語:
- 英語
- 請求記号:
- P63600/2397
- 資料種別:
- 国際会議録
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4
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Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion-Beam and Molecular-Beam-Epitaxy Method
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Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion-Beam and Molecular-Beam-Epitaxy Method
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