Pulsed anodization technique for fabricating GaSb-based lasers

Pulsed anodization technique for fabricating GaSb-based lasers

著者名:

掲載資料名:

Laser diodes and applications : 8-10 February 1995 San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2382

発行年:

1995

開始ページ:

244

終了ページ:

249

総ページ数:

6

出版情報:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819417299 [0819417297]

言語:

英語

請求記号:

P63600/2382

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00057585
シリーズID:	PA00000029
会議名:	Symposium on laser diodes and applications
回次:	1994
会議開催地:	San Jose, CA, USA
会議開催年:	1995.02.08-1995.02.10
論文注記:	1994 Symposium on laser diodes and applications, February 8-10, 1995, San Jose, CA, USA. 2382-34

類似資料:

1 国際会議録 GaSb-based mid-infrared quantum well diode lasers H.K. Choi, G.W. Turner Society of Photo-optical Instrumentation Engineers	7 国際会議録 High-brightness tapered laser sources in the 1.3- to 2.0-ｦﾌm wavelength range Walpole,J.N., Donnelly,J.P., Choi,H.K., Liau,Z.L., Missaggia,L.J., Bailey,R.J., Groves,S.H., Turner,G.W., Taylor,P.J., … SPIE - The International Society for Optical Engineering
2 国際会議録 MBE GROWTH OF GaInAsSb/AlGaAsSb DOUBLE HETEROSTRUCTURES FOR DIODE LASERS EMITTING BEYOND 2 μm Eglash, S.J., Choi, H.K., Turner, G.W., Finn, M.C. Materials Research Society	8 国際会議録 Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05ｦﾌm Choi,H.K., Turner,G.W., Walpole,J.N., Manfra,M.J., Connors,M.K., Missaggia,L.J. SPIE-The International Society for Optical Engineering
3 国際会議録 InAsSb/InAIAsSb quantum well diode lasers emitting beyond 3 ｦﾌm Choi,H.K., Turner,G.W., Manfra,M.J., Connors,M.K., Herrmann,F.P., Baliga,A., Anderson,N.G. SPIE-The International Society for Optical Engineering	9 国際会議録 High-power diode-pumped mid-infrared semiconductor lasers H.Q. Le, G.W. Turner, H.K. Choi, J.R. Ochoa, A. Sanchez Society of Photo-optical Instrumentation Engineers
4 国際会議録 Efficiency and power issues in Sb-based mid-infrared lasers (Invited Paper) Le,H.Q., Turner,G.W., Ochoa,J.R., Choi,H.K., Lin,C.-H., Yang,R.Q., Pei,S.S. SPIE-The International Society for Optical Engineering	10 国際会議録 External-cavity midinfrared semiconductor lasers Le,H.Q., Turner,G.W., Ochoa,J.R., Manfra,M.J., Cook,C.C., Zhang,Y.-H. SPIE-The International Society for Optical Engineering
5 国際会議録 HIGH-SPEED PHOTOCONDUCTIVE DETECTORS FABRICATED IN HETEROEPITAXIAL GaAS LAYERS Turner, G.W., Diadiuk, V., Le, H.Q., Choi, H.K., Metze, G.M., Tsaur, B-Y. Materials Research Society	11 国際会議録 Gain-current relation in CdZnSe single quantum well lasers: modeling and experiment Hsu,C.-F., Zory,P.S.., Haase,M.A. SPIE-The International Society for Optical Engineering
6 国際会議録 Internal quantum effeciency measurements of GaInP quantum well laser material using liquid contact luminescence Hsu,C.F., Largent,C.C., O,J.S., Young,C.L., Zory,P.S., Bour,D.P. SPIE-The International Society for Optical Engineering	12 国際会議録 Thermally induced delayed turn-on in thin p-clad lasers Miester,C.F., Wu,C.H., Zory,P.S., Emanuel,M.A. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12