Plasma-enhanced chemical vapor deposition of nitrogen-rich silicon oxynitride thin film for gate insulator application

Plasma-enhanced chemical vapor deposition of nitrogen-rich silicon oxynitride thin film for gate insulator application

著者名:

掲載資料名:

Second International Conference on Thin Film Physics and Applications : '94 TFPA : 15-17 April 1994, Shanghai, China

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2364

発行年:

1994

開始ページ:

470

終了ページ:

473

総ページ数:

4

出版情報:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819417084 [0819417084]

言語:

英語

請求記号:

P63600/2364

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00057567
シリーズID:	PA00000029
会議名:	International Conference on Thin Film Physics and Applications : TFPA
回次:	2nd
会議開催地:	Shanghai, China
会議開催年:	1994.04.15-1994.04.17
論文注記:	2nd International Conference on Thin Film Physics and Applications : TFPA, April 15-17, 1994, Shanghai, China. 2364-80

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