Electromigration characteristics for Al-Ge-Cu

Electromigration characteristics for Al-Ge-Cu

著者名:

掲載資料名:

Microelectronics manufacturability, yield, and reliability : 20-21 October 1994, Austin, Texas

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2334

発行年:

1994

開始ページ:

4

終了ページ:

13

総ページ数:

10

出版情報:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819416674 [0819416673]

言語:

英語

請求記号:

P63600/2334

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00057537
シリーズID:	PA00000029
会議名:	Symposium on microelectronics manufacturability, yield, and reliability
回次:	1994
会議開催地:	Austin, TX, USA
会議開催年:	1994.10.20-1994.10.21
論文注記:	1994 Symposium on microelectronics manufacturability, yield, and reliability, October 20-21, 1994, Austin, TX, USA. 2334-02

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