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Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy

著者名:
掲載資料名:
Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
シリーズ名:
Materials science forum
シリーズ巻号:
858
発行年:
2016
開始ページ:
357
終了ページ:
360
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710427 [3035710422]
言語:
英語
請求記号:
M23650 [v.858]
資料種別:
国際会議録

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