Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers

Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

858

発行年:

2016

開始ページ:

341

終了ページ:

344

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

言語:

英語

請求記号:

M23650 [v.858]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00055306
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
回次:	16th
会議開催地:	Giardini Naxos, Italy
会議開催年:	2015.10.04-2015.10.09
論文注記:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

類似資料:

1 国際会議録 Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC B. Kallinger, P. Berwian, J. Friedrich, M. Rommel, M. Azizi Trans Tech Publications	7 国際会議録 Defects Limiting Minorty Carrier Lifetime in 4H-SiC Epilayers P. B. Klein, B. Shanabrook, S. Huh, A. Polyakov, M. Skowronski, J. Sumakeris, M. O'Loughlin Electrochemical Society
2 国際会議録 HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices B. Kallinger, C. Ehlers, P. Berwian, M. Rommel, J. Friedrich Trans Tech Publications	8 国際会議録 Long Carrier Lifetimes in n-Type 4H-SiC Epilayers P.B. Klein Trans Tech Publications
3 国際会議録 SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV B. Kallinger, P. Berwian, J. Friedrich, C. Hecht, D. Peters Trans Tech Publications	9 国際会議録 Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors A. Shrivastava, P.B. Klein, E.R. Glaser, J.D. Caldwell, A.V. Bolotnikov Trans Tech Publications
4 国際会議録 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions B. Kallinger, B. Thomas, P. Berwian, J. Friedrich, G. Trachta Trans Tech Publications	10 国際会議録 Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers P.B. Klein, J.D. Caldwell, A. Shrivastava, T.S. Sudarshan Trans Tech Publications
5 国際会議録 Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC B. Kallinger, B. Thomas, S. Polster, P. Berwian, J. Friedrich Trans Tech Publications	11 国際会議録 Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers Huh, S.W., Sumakeris, J.J., Polyakov, A.Y., Skowronski, M., Klein, P.B., Shanabrook, B.V., O'Loughlin, M.J. Trans Tech Publications
6 国際会議録 Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and µ-PCD B. Kallinger, M. Rommel, L. Lilja, J. Ul Hassan, I.D. Booker Trans Tech Publications	12 国際会議録 Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination A. Galeckas, H.M. Ayedh, J.P. Bergman, B.G. Svensson Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12