Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction

Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

858

発行年:

2016

開始ページ:

119

終了ページ:

124

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

言語:

英語

請求記号:

M23650 [v.858]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00055306
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
回次:	16th
会議開催地:	Giardini Naxos, Italy
会議開催年:	2015.10.04-2015.10.09
論文注記:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

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1 国際会議録 Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques H. Tsuchida, I. Kamata, M. Ito, T. Miyazawa, N. Hoshino Trans Tech Publications	7 国際会議録 Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation H. Fujibayashi, M. Ito, H. Ito, I. Kamata, M. Naito Trans Tech Publications
2 国際会議録 Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer H. Tsuchida, M. Ito, I. Kamata, M. Nagano Trans Tech Publications	8 国際会議録 Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications
3 国際会議録 Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers H. Tsuchida, M. Ito, I. Kamata, M. Nagano, T. Miyazawa Trans Tech Publications	9 国際会議録 Growth of 4H-SiC Epilayers and Z_1/2 Center Elimination T. Miyazawa, H. Tsuchida Trans Tech Publications
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6 国際会議録 LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	12 国際会議録 Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient M. Ito, H. Tsuchida, I. Kamata, L. Storasta Trans Tech Publications

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