Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al2O3 Gate Dielectric Fabricated on SiC Substrates
- 著者名:
- 掲載資料名:
- Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 821-823
- 発行年:
- 2015
- 開始ページ:
- 937
- 終了ページ:
- 940
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
国際会議録
Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
Trans Tech Publications |
Trans Tech Publications |
11
国際会議録
Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
Trans Tech Publications |
6
国際会議録
4.6 kV, 10.5 mOhm&×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
Trans Tech Publications |
Trans Tech Publications |