Comparison of Turn-Off Strategies for SiC Thyristors

Comparison of Turn-Off Strategies for SiC Thyristors

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

889

終了ページ:

892

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

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1 国際会議録 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development Agarwal, A., Ryu, S. -H., Singh, R., Kordina, O., Palmour, J. W. Trans Tech Publications	7 国際会議録 9 kV, 1 cm² SiC Gate Turn-Off Thyristors A.K. Agarwal, Q.C.J. Zhang, R. Callanan, C. Capell, A.A. Burk Trans Tech Publications
2 国際会議録 Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications S.G. Sundaresan, E. Lieser, R. Singh Trans Tech Publications	8 国際会議録 4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control Shah, P. B., Geil, B. R., Jones, K. A., Griffin, T. E., Derenge, M. A. Trans Tech Publications
3 国際会議録 4H-SiC Gate Turn-Off(GTO)Thyristor Development Casady,J.B., Agarwal,A.K., Rowland,L.B., Siergiej,R.R., Seshadri,S., Mani,S., Barrows,J., Piceone,D., Sanger,P.A., … Trans Tech Publications	9 国際会議録 Comparison of SiC Thyristors with Differently Etched JTEs G. Pâques, S. Scharnholz, N. Dheilly, D. Planson, R.W. De Doncker Trans Tech Publications
4 国際会議録 Turn-On Process in High-Voltage 4H-SiC Thyristors Dyakonova, N. V., Levinshtein, M. E., Palmour, J. W., Rumyantsev, S. L., Singh, R. MRS - Materials Research Society	10 国際会議録 Comparison of Energy Losses in High-Current 1700 V Switches S. Sundaresan, B. Grummel, R. Singh Trans Tech Publications
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6 国際会議録 Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L., Ryu, S.H., Shur, M.S. Trans Tech Publications	12 国際会議録 Current Gain Stability of SiC Junction Transistors Subjected to Long-Duration DC and Pulsed Current Stress S. Sundaresan, B. Grummel, R. Singh Trans Tech Publications

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