Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities

Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

456

終了ページ:

459

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

類似資料:

1 国際会議録 Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model K. Kawahara, J. Suda, T. Kimoto Trans Tech Publications	7 国際会議録 Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation H. Miyake, T. Kimoto, J. Suda Trans Tech Publications
2 国際会議録 High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces M. Noborio, J. Suda, T. Kimoto Trans Tech Publications	8 国際会議録 Influence of Substrate Misorientation Angle and Direction in Molecular-Beam Epitaxial Growth of GaN on Off-Axis SiC (0001) Suda, Jun, Nakano, Yuki, Kimoto, Tsunenobu Materials Research Society
3 国際会議録 Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals S. Sasaki, J. Suda, T. Kimoto Trans Tech Publications	9 国際会議録 High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient Kanzaki, Y., Kinbara, H., Kosugi, H., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications
4 国際会議録 Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation N. Kaji, H. Niwa, J. Suda, T. Kimoto Trans Tech Publications	10 国際会議録 Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals T. Okuda, H. Miyake, T. Kimoto, J. Suda Trans Tech Publications
5 国際会議録 Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature M. Kato, Y. Nanen, J. Suda, T. Kimoto Trans Tech Publications	11 国際会議録 Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers T. Hayashi, K. Asano, J. Suda, T. Kimoto Trans Tech Publications
6 国際会議録 In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate G. Feng, J. Suda, T. Kimoto Trans Tech Publications	12 国際会議録 Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes H. Niwa, G. Feng, J. Suda, T. Kimoto Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12