Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices
- 著者名:
- 掲載資料名:
- Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 821-823
- 発行年:
- 2015
- 開始ページ:
- 411
- 終了ページ:
- 415
- 総ページ数:
- 5
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
5
国際会議録
Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon
Trans Tech Publications |
11
国際会議録
Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
Trans Tech Publications |
Trans Tech Publications |
12
国際会議録
Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics
Trans Tech Publications |