Blank Cover Image

Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy

著者名:
掲載資料名:
Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
シリーズ名:
Materials science forum
シリーズ巻号:
821-823
発行年:
2015
開始ページ:
403
終了ページ:
406
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 The Effect of Incomplete Ionization on SiC Devices during High Speed Switching

K. Ebihara, K. Kawahara, H. Watanabe, S. Nakata, S. Yamakawa

Trans Tech Publications
7 国際会議録 Study of Deep Levels by Admittance Spectroscopy in High Resistivity P-Type 6H-SiC Single Crystals

Evwaraye, A. O., Smith, S. R., Mitchel, W. C.

MRS - Materials Research Society
2 国際会議録 Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC

K. Kawahara, G. Alfieri, T. Hiyoshi, G. Pensl, T. Kimoto

Trans Tech Publications
8 国際会議録 Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC

T. Watanabe, S. Hino, Y. Ebiike, N. Miura, M. Imaizumi

Trans Tech Publications
3 国際会議録 Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC

K. Kawahara, G. Alfieri, T. Kimoto

Trans Tech Publications
9 国際会議録 Deep Trap Characterization in GaN Using Thermal and Optical Admittance Spectroscopy

KrTschil, A., Witte, H., Lisker, M., Christen, J., Birkle, U., Einfeldt, S., Hommel, D., Topf, M., Meyer, B. K.

MRS - Materials Research Society
4 国際会議録 Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy

N. Iwamoto, A. Azarov, T. Ohshima, A.M.M. Moe, B.G. Svensson

Trans Tech Publications
10 国際会議録 Deep Levels in 6H-SiC As Studied by Admittance Spectroscopy Techniques

Mitchel, W.U, Evwaraye, A.O., Smith, S.R.

Electrochemical Society
5 国際会議録 Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC

K. Kawahara, G. Alfieri, M. Krieger, T. Kimoto

Trans Tech Publications
11 国際会議録 High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers

Schoner, A., Fujihira, K., Kimoto, T., Matsunami, H.

Trans Tech Publications
6 国際会議録 Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy

Reshanov, S.A., Klettke, O., Pensl, G.

Trans Tech Publications
12 国際会議録 Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy

K. Danno, T. Kimoto

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12