Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC

Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

347

終了ページ:

350

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

類似資料:

1 国際会議録 Passivation and Generation of States at P-Implanted Thermally Grown and Deposited NType 4H-SiC/SiO₂ Interfaces T. Sledziewski, H.B. Weber, M. Krieger Trans Tech Publications	7 国際会議録 Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC M. Obernhofer, M. Krieger, F. Schmid, H.B. Weber, G. Pensl, A. Schoerner Trans Tech Publications
2 国際会議録 Electrical Activation of B⁺-Ions Implanted into 4H-SiC T. Tsirimpis, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications	8 国際会議録 Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications
3 国際会議録 Doping of 4H-SiC with Group IV Elements M. Krieger, M. Rühl, T. Sledziewski, G. Ellrott, T. Palm Trans Tech Publications	9 国際会議録 On the Origin of Threshold Voltage Instability under Operating Conditions of 4H-SiC n-Channel MOSFETs G. Pobegen, J. Weisse, M. Hauck, H.B. Weber, M. Krieger Trans Tech Publications
4 国際会議録 Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation T. Sledziewski, A. Mikhaylov, S. Reshanov, A. Schöner, H.B. Weber Trans Tech Publications	10 国際会議録 Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy M. Hauck, J. Weisse, J. Lehmeyer, G. Pobegen, H.B. Weber, M. Krieger Trans Tech Publications
5 国際会議録 On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC J. Weber, H.B. Weber, M. Krieger Trans Tech Publications	11 国際会議録 Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC K. Kawahara, G. Alfieri, M. Krieger, T. Kimoto Trans Tech Publications
6 国際会議録 Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, B. Kallinger Trans Tech Publications	12 国際会議録 Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12