Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

85

終了ページ:

89

総ページ数:

5

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

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1 国際会議録 Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a M. Dudley, H.H. Wang, F.Z. Wu, S. Byrappa, B. Raghothamachar Trans Tech Publications	7 国際会議録 The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC F.Z. Wu, M. Dudley, H.H. Wang, S. Byrappa, S. Sun Trans Tech Publications
2 国際会議録 Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT-Grown Substrates with Associated Stacking Faults S. Byrappa, F.Z. Wu, H.H. Wang, B. Raghothamachar, G. Choi Trans Tech Publications	8 国際会議録 Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC H. Wang, F. Wu, Y. Yang, J. Guo, B. Raghothamachar Trans Tech Publications
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