Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC
- 著者名:
- 掲載資料名:
- HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 806
- 発行年:
- 2015
- 開始ページ:
- 61
- 終了ページ:
- 64
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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11
国際会議録
Photoelectrical Parameters of a PVT Grown Bulk 15R-SiC Crystal at Different Stages of Growth
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