4H-SiC Trench MOSFET with Bottom Oxide Protection

4H-SiC Trench MOSFET with Bottom Oxide Protection

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

2

開始ページ:

919

終了ページ:

922

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

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1 国際会議録 Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET Y. Kagawa, R. Tanaka, N. Fujiwara, K. Sugawara, Y. Fukui Trans Tech Publications	7 国際会議録 Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETS on (1120) Face Yano, H., Hirao, T., Kimoto, T., Matsunami, H., Asano, K., Sugawara, Y. Trans Tech Publications
2 国際会議録 4H-SiC Trench MOSFET with Thick Bottom Oxide H. Takaya, J. Morimoto, T. Yamamoto, J. Sakakibara, Y. Watanabe Trans Tech Publications	8 国際会議録 Trench-MOSFETs on 4H-SiC C.T. Banzhaf, S. Schwaiger, D. Scholten, S. Noll, M. Grieb Trans Tech Publications
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