Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C

Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

2

開始ページ:

681

終了ページ:

684

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC K. Smedfors, C.M. Zetterling, M. Östling Trans Tech Publications	7 国際会議録 High-Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC Zetterling, C-M., Ostling, M., Norin, L., Jansson, U. MRS - Materials Research Society
2 国際会議録 Design and Characterization of 500°C Schmitt Trigger in 4H-SiC S. Kargarrazi, L. Lanni, C.M. Zetterling Trans Tech Publications	8 国際会議録 Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices Lee, H.S., Domeij, M., Zetterling, C.M., Ostling, M., Lu, J. Trans Tech Publications
3 国際会議録 A 500 ° C Monolithic SiC BJT Latched Comparator Y. Tian, L. Lanni, A. Rusu, C.M. Zetterling Trans Tech Publications	9 国際会議録 ECL-Based SiC Logic Circuits for Extreme Temperatures L. Lanni, B.G. Malm, M. Östling, C.M. Zetterling Trans Tech Publications
4 国際会議録 High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications L. Lanni, B.G. Malm, C.M. Zetterling, M. Östling Trans Tech Publications	10 国際会議録 10+ kV Implantation-Free 4H-SiC PiN Diodes A. Salemi, H. Elahipanah, C.M. Zetterling, M. Östling Trans Tech Publications
5 国際会議録 SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs L. Lanni, B.G. Malm, M. Östling, C.M. Zetterling Trans Tech Publications	11 国際会議録 Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide R. Ghandi, H.S. Lee, M. Domeij, C.M. Zetterling, M. Östling Trans Tech Publications
6 国際会議録 Bipolar Integrated OR-NOR Gate in 4H-SiC L. Lanni, R. Ghandi, C.M. Zetterling, B.G. Malm, M. Östling Trans Tech Publications	12 国際会議録 Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges A. Salemi, H. Elahipanah, C.M. Zetterling, M. Östling Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12