Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

Al⁺ Implanted 4H-SiC p⁺-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

2

開始ページ:

657

終了ページ:

660

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Ion Implanted Lateral p⁺-i-n⁺ Diodes on HPSI 4H-SiC R. Nipoti, F. Moscatelli, A. Roncaglia, F. Bonafè, F. Mancarella Trans Tech Publications	7 国際会議録 Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, S. Cristiani Trans Tech Publications
2 国際会議録 C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes F. Fabbri, F. Moscatelli, A. Poggi, R. Nipoti, A. Cavallini Trans Tech Publications	8 国際会議録 Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs F. Moscatelli, A. Poggi, S. Solmi, R. Nipoti, A. Armigliato Trans Tech Publications
3 国際会議録 Al⁺ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts R. Nipoti, A. Hallén, A. Parisini, F. Moscatelli, S. Vantaggio Trans Tech Publications	9 国際会議録 High Dose Al⁺ Implanted and Microwave Annealed 4H-SiC R. Nipoti, A. Nath, M.V. Rao, A. Hallén, F. Mancarella Trans Tech Publications
4 国際会議録 Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC P. Fedeli, M. Puzzanghera, F. Moscatelli, R.A. Minamisawa, G. Alfieri, U. Grossner, R. Nipoti Trans Tech Publications	10 国際会議録 Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers R. Nipoti, A. Nath, Y.L. Tian, F. Tamarri, F. Moscatelli Trans Tech Publications
5 国際会議録 Ar Annealing at 1600℃ and 1650℃ of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature Bergamini, F., Moscatelli, F., Canino, M., Poggi, A., Nipoti, R. Trans Tech Publications	11 国際会議録 SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature Poggi, A., Nipoti, R., Moscatelli, F., Cardinali, G.C., Canino, M. Trans Tech Publications
6 国際会議録 Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient Nipoti, R., Bergamini, F., Moscatelli, F., Poggi, A., Canino, M., Bertuccio, G. Trans Tech Publications	12 国際会議録 Post-Implantation Annealing of SiC: Relevance of the Heating Rate R. Nipoti Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12