Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs

Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

533

終了ページ:

536

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing R. Green, A.J. Lelis, D.B. Habersat Trans Tech Publications	7 国際会議録 A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs R. Green, A.J. Lelis, M. El, D.B. Habersat Trans Tech Publications
2 国際会議録 Short-Circuit Robustness Testing of SiC MOSFETs R. Green, D.P. Urciuoli, A.J. Lelis Trans Tech Publications	8 国際会議録 Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices D.B. Habersat, A.J. Lelis, R. Green Trans Tech Publications
3 国際会議録 Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs A.J. Lelis, D.B. Habersat, R. Green, N. Goldsman Trans Tech Publications	9 国際会議録 Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs S. Potbhare, N. Goldsman, G. Pennington, A. Lelis, J.M. McGarrity Trans Tech Publications
4 国際会議録 Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs R. Green, A. Lelis, M. El, D. Habersat Trans Tech Publications	10 国際会議録 Comparison Test Methods for Proper Characterization of V_T in SiC MOSFETs D.B. Habersat, A.J. Lelis, R. Green, M. El Trans Tech Publications
5 国際会議録 High-Temperature Reliability of SiC Power MOSFETs A.J. Lelis, R. Green, D.B. Habersat Trans Tech Publications	11 国際会議録 Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs Lelis, A.J., Habersat, D.B., Lopez, G., McGarrity, J.M., McLean, F.B., Goldsman, N. Trans Tech Publications
6 国際会議録 Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps A.J. Lelis, R. Green, D.B. Habersat Trans Tech Publications	12 国際会議録 Evaluation of PBTS and NBTS in SiC MOS Using In Situ* Charge Pumping Measurements* D.B. Habersat, A.J. Lelis, R. Green, M. El Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12