Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

436

終了ページ:

439

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy M. Hauck, J. Weisse, J. Lehmeyer, G. Pobegen, H.B. Weber, M. Krieger Trans Tech Publications	7 国際会議録 Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy M. Kato, K. Kito, M. Ichimura Trans Tech Publications
2 国際会議録 High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers Schoner, A., Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	8 国際会議録 Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates Gassoumi, M., Sghaier, N., Dermoul, I., Chekir, F., Maaref, H., Bluet, J.M., Guillot, G., Morvan, E., Noblanc, O., Dua, … Trans Tech Publications
3 国際会議録 Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy Reshanov, S.A., Schneider, K., Helbig, R., Pensl, G., Nagasawa, H., Schoner, A. Trans Tech Publications	9 国際会議録 Electrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current Mapping F. Giannazzo, S. Hertel, A. Albert, G. Fisichella, A. La Magna Trans Tech Publications
4 国際会議録 Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy Reshanov, S.A., Klettke, O., Pensl, G. Trans Tech Publications	10 国際会議録 Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons M. Weidner, L. Trapaidze, G. Pensl, S.A. Reshanov, A. Schöner Trans Tech Publications
5 国際会議録 Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy S.A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki Trans Tech Publications	11 国際会議録 Deep Level Defects in He-Implanted n-6H-SiC Studied by Deep Level Transient Spectroscopy Chen, X.D., Ling, C.C., Fung, S., Beling, C.D., Wu, H.S., Brauer, G., Anwand, W., Skorupa, W. Materials Research Society
6 国際会議録 On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC J. Weber, H.B. Weber, M. Krieger Trans Tech Publications	12 国際会議録 Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates S. Kamoi, N. Hasuike, K. Kisoda, H. Harima, K. Morita Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12