C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

414

終了ページ:

417

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance Y. Kagoyama, M. Okamoto, S. Harada, R. Arai, T. Umeda Trans Tech Publications	7 国際会議録 Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs Kosugi, R., Okamoto, M., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Arai, K. Trans Tech Publications
2 国際会議録 Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance G.W. Kim, R. Arai, S.J. Ma, M. Okamoto, H. Yoshioka Trans Tech Publications	8 国際会議録 Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs Kosugi, R., Okamoto, M., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Arai, K. Trans Tech Publications
3 国際会議録 Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO₂ Interfaces T. Umeda, R. Kosugi, K. Fukuda, N. Morishita, T. Ohshima Trans Tech Publications	9 国際会議録 Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs C.J. Cochrane, P.M. Lenahan, A.J. Lelis Trans Tech Publications
4 国際会議録 Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, N. Morishita Trans Tech Publications	10 国際会議録 4H-SiC p-Channel MOSFETs with Epi-Channel Structure M. Okamoto, T. Yatsuo, K. Fukuda, H. Okumura, K. Arai Trans Tech Publications
5 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications	11 国際会議録 Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K. Trans Tech Publications
6 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications	12 国際会議録 Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12