Polarized Photoluminescence from Partial Dislocations in 4H-SiC

Polarized Photoluminescence from Partial Dislocations in 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

319

終了ページ:

323

総ページ数:

5

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

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1 国際会議録 Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC R. Hirano, Y. Sato, M. Tajima, K.M. Itoh, K. Maeda Trans Tech Publications	7 国際会議録 Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers I. Kamata, M. Nagano, H. Tsuchida Trans Tech Publications
2 国際会議録 Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC K. Maeda, R. Hirano, Y. Sato, M. Tajima Trans Tech Publications	8 国際会議録 Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings X. Zhang, M. Nagano, H. Tsuchida Trans Tech Publications
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