Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy

Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

309

終了ページ:

312

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing M.J. Tadjer, N.A. Mahadik, B.N. Feigelson, R.E. Stahlbush, E.A. Imhoff Trans Tech Publications	7 国際会議録 Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC R.L. Myers-Ward, B.L. VanMil, R.E. Stahlbush, S.L. Katz, J.M. McCrate Trans Tech Publications
2 国際会議録 Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers N.A. Mahadik, R.E. Stahlbush, A. Nath, M.J. Tadjer, E.A. Imhoff Trans Tech Publications	8 国際会議録 A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy R.E. Stahlbush, R.L. Myers-Ward, B.L. VanMil, D.K. Gaskill, C.R. Eddy Jr. Trans Tech Publications
3 国際会議録 Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, M.J. O'Loughlin, A.A. Burk Trans Tech Publications	9 国際会議録 Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices Sumakeris, J.J., Bergman, J.P., Das, M.K., Hallin, C., Hull, B.A., Janzen, E., Lendenmann, H., O'Loughlin, M.J., … Trans Tech Publications
4 国際会議録 Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal R.E. Stahlbush, N.A. Mahadik, Q.J. Zhang, A.A. Burk, B.A. Hull Trans Tech Publications	10 国際会議録 Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, K.D. Hobart Trans Tech Publications
5 国際会議録 Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy N.A. Mahadik, R.E. Stahlbush, S.B. Qadri, O.J. Glembocki, D.A. Alexson Trans Tech Publications	11 国際会議録 Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy R.E. Stahlbush, K.X. Liu, Q. Zhang, J.J. Sumakeris Trans Tech Publications
6 国際会議録 Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes R.E. Stahlbush, Q.C.J. Zhang, A.K. Agarwal, N.A. Mahadik Trans Tech Publications	12 国際会議録 Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures Liu, K.X., Stahlbush, R.E., Hobart, K.D., Sumakeris, J.J. Trans Tech Publications

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