Identification of Structures of the Deep Levels in 4H-SiC

Identification of Structures of the Deep Levels in 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

277

終了ページ:

280

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation K. Yoshihara, M. Kato, M. Ichimura, T. Hatayama, T. Ohshima Trans Tech Publications	7 国際会議録 Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC M. Kato, H. Ono, M. Ichimura Trans Tech Publications
2 国際会議録 Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay … V. Matsushita, M. Kato, M. Ichimura, T. Hatayama, T. Ohshima Trans Tech Publications	8 国際会議録 Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC M. Kato, Y. Mori, M. Ichimura Trans Tech Publications
3 国際会議録 Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition Kato, M., Tanaka, S., Ichimura, M., Arai, E., Nakamura, S., Kimoto, T. Trans Tech Publications	9 国際会議録 Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy N. Iwamoto, A. Azarov, T. Ohshima, A.M.M. Moe, B.G. Svensson Trans Tech Publications
4 国際会議録 Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy M. Kato, K. Kito, M. Ichimura Trans Tech Publications	10 国際会議録 Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes Y. Mori, M. Kato, M. Ichimura Trans Tech Publications
5 国際会議録 Characterization Of Deep Levels In 3C-SiC By Optical Capacitance-Transient Spectroscopy Nakakura, Y., Kato, M., Ichimura, M., Arai, E., Tokuda, Y. Materials Research Society	11 国際会議録 Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC M. Kimura, M. Kato, M. Ichimura Trans Tech Publications
6 国際会議録 Deep Level Study In Epitaxial 4H-SiC Grown On Substrates Inclined Toward <1Bar100> Kato, Masashi, Ichimura, Masaya, Arai, Eisuke, Nishino, Shigehiro Materials Research Society	12 国際会議録 Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC Yoshikawa, M., Ohshima, T., Itoh, H., Takahashi, K., Kitabatake, M. Trans Tech Publications

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