Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

179

終了ページ:

182

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

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1 国際会議録 Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman Trans Tech Publications	7 国際会議録 Oxidation Induced ON₁, ON_2a/b Defects in 4H-SiC Characterized by DLTS I.D. Booker, H. Abdalla, L. Lilja, J. Ul Hassan, P. Bergman Trans Tech Publications
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3 国際会議録 On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications J. ul Hassan, I. Booker, L. Lilja, A. Hallén, M. Fagerlind Trans Tech Publications	9 国際会議録 The Role of Chlorine during High Growth Rate Epitaxy R. Karhu, I. Booker, J. Ul Hassan, I. Ivanov, E. Janzén Trans Tech Publications
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