Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate

Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

131

終了ページ:

134

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Surface Preparation of 4 ° Off-Axis 4H-SiC Substrate for Epitaxial Growth X. Li, J. ul Hassan, O. Kordina, E. Janzén, A. Henry Trans Tech Publications	7 国際会議録 Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén Trans Tech Publications
2 国際会議録 Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates A. Henry, S. Leone, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications	8 国際会議録 Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor Henry, A., Janzen, E. Trans Tech Publications
3 国際会議録 CVD Growth of 3C-SiC on 4H-SiC Substrate A. Henry, X. Li, S. Leone, O. Kordina, E. Janzén Trans Tech Publications	9 国際会議録 Chloride-Based CVD at High Growth Rates on 3″ Vicinal Off-Angles SiC Wafers S. Leone, A. Henry, O. Kordina, E. Janzén Trans Tech Publications
4 国際会議録 Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates H. Jacobson, X. Li, E. Janzén, A. Henry Trans Tech Publications	10 国際会議録 Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman Trans Tech Publications
5 国際会議録 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles Saitoh, H., Kimoto, T. Trans Tech Publications	11 国際会議録 Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization Bishop, S.M., Preble, E.A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., Wagner, B.P., Reitmeier, Z.J., Janzen, … Trans Tech Publications
6 国際会議録 Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates Masahara, K., Kushibe, M., Ohno, H., Kojima, K., Takahashi, T., Ishida, Y., Suzuki, T., Tanaka, T., Yoshida, S., Arai, … Trans Tech Publications	12 国際会議録 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate J. Hassan, J.P. Bergman, A. Henry, H. Pedersen, P.J. McNally, E. Janzen Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12