Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

117

終了ページ:

120

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

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1 国際会議録 Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates M. Ito, H. Fujibayashi, H. Ito, I. Kamata, M. Naito Trans Tech Publications	7 国際会議録 Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC J. Nishio, H. Asamizu, C. Kudou, S. Ito, K. Masumoto Trans Tech Publications
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