Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle

Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

99

終了ページ:

102

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate K. Kojima, K. Masumoto, S. Ito, A. Nagata, H. Okumura Trans Tech Publications	7 国際会議録 Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4° Off-Axis 4H-SiC Substrates T. Aigo, W. Ito, H. Tsuge, H. Yashiro, M. Katsuno Trans Tech Publications
2 国際会議録 4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate K. Kojima, S. Ito, J. Senzaki, H. Okumura Trans Tech Publications	8 国際会議録 Improvement of Homoepitaxial Layer Quality Grown on 4H-SiC Si-Face Substrate Lower than 1 Degree Off Angle K. Kojima, S. Ito, A. Nagata, H. Okumura Trans Tech Publications
3 国際会議録 The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle K. Masumoto, K. Kojima, H. Okumura Trans Tech Publications	9 国際会議録 Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers I. Kamata, M. Nagano, H. Tsuchida Trans Tech Publications
4 国際会議録 Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry H. Matsuhata, H. Yamaguchi, I. Nagai, T. Ohno, R. Kosugi Trans Tech Publications	10 国際会議録 Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC J. Nishio, H. Asamizu, C. Kudou, S. Ito, K. Masumoto Trans Tech Publications
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6 国際会議録 Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H₂-SiH₄-C₃H₈ CVD System K. Tamura, C. Kudou, K. Masumoto, J. Nishio, K. Kojima Trans Tech Publications	12 国際会議録 Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC T. Sato, Y. Orai, T. Isshiki, M. Fukui, K. Nakamura Trans Tech Publications

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