Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique

Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

47

終了ページ:

50

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

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1 国際会議録 Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method K. Eto, T. Kato, S. Takagi, T. Miura, Y. Urakami Trans Tech Publications	7 国際会議録 Growth and Evaluation of High Quality SiC Crystal by Sublimation Method Oyanagi, N., Yamaguchi, H., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications
2 国際会議録 Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping K. Eto, H. Suo, T. Kato, H. Okumura Trans Tech Publications	8 国際会議録 Growth and Evaluation of High Quality SiC Crystal by Sublimation Method Oyanagi, N., Yamaguchi, H., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications
3 国際会議録 Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping H. Suo, K. Eto, T. Kato, K. Kojima, H. Osawa, H. Okumura Trans Tech Publications	9 国際会議録 High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials Ota, S., Furusho, T., Takagi, H., Oshima, S., Nishino, S. Trans Tech Publications
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5 国際会議録 Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping T. Kato, T. Miura, K. Wada, E. Hozomi, H. Taniguchi, S.I. Nishizawa, K. Arai Trans Tech Publications	11 国際会議録 Enlargement Growth of Large 4H-SiC Bulk Single Crystal T. Kato, T. Miura, I. Nagai, H. Taniguchi, H. Kawashima Trans Tech Publications
6 国際会議録 Polarity Inversion of SiC(0001) during the Al Doped PVT Growth K. Eto, T. Miura, T. Kato, H. Okumura Trans Tech Publications	12 国際会議録 Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity T. Shirai, K. Danno, A. Seki, H. Sakamoto, T. Bessho Trans Tech Publications

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