Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)

Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)

著者名:

掲載資料名:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

シリーズ名:

Materials science forum

シリーズ巻号:

740-742

発行年:

2013

開始ページ:

393

終了ページ:

396

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054223
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
回次:	9th
会議開催地:	St. Petersburg, Russian Federation
会議開催年:	2012.09.02-2012.09.06
論文注記:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

類似資料:

1 国際会議録 Concentration Profile Simulation of SiC/Si Heterostructures J. Pezoldt, V.S. Kharlamov, D.V. Kulikov, M.N. Lubov, Y.V. Trushin Trans Tech Publications	7 国際会議録 Molecular dynamics study of diffusion barriers of Si and C adatoms on Si surfaces Kharlamov, V. S., Lubov, M. N., Pezoldf, J., Trushin, Y. V., Zhurkin, E. E. SPIE - The International Society of Optical Engineering
2 国際会議録 Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process Safonov, K.L., Kulikov, D.V., Trushin, Y.V., Pezoldt, J. SPIE-The International Society for Optical Engineering	8 国際会議録 Monte Carlo Simulation of Cluster Growth and Defect Annealing Fedorov, A. V., Veen, A. van, Hosson, J. Th. De MRS - Materials Research Society
3 国際会議録 Nucleation of SiC on Si and their relationship to nano-dot formation: II. Theoretical investigation Safonov, K.L., Kulikov, D.V., Trushin, Y.V., Pezoldt, J. SPIE-The International Society for Optical Engineering	9 国際会議録 Computer simulation and RBS/C studies of high-dose N+ and Al- co-implantation in 6H-SiC Kharlamov,V.S., Kulikov,D.V., Trushin,Yu.V., Tsigankov,D.N., Yankov,R.A., Voelskow,M., Skorupa,W., Pezoldt,J. SPIE-The International Society for Optical Engineering
4 国際会議録 Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si Safonov, K. L., Trushin, Yu. V., Ambacher, O., Pezoldt, J. Trans Tech Publications	10 国際会議録 Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si Cimalla, V., Attenberger, W., Lindner, J. K. N., Stritzker, B., Pezoldt, J. Trans Tech Publications
5 国際会議録 Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures Schmidt, A.A., Trushin, Y.V., Safonov, K.L., Kharlamov, V.S., Kulikov, D.V., Ambacher, O., Pezoldt, J. Trans Tech Publications	11 国際会議録 100c. Molecular Simulation of the Formation of Ultrathin Silica Films from Teos (tetraethoxysilane) Using Kinetic Monte Carlo J.M. Don MacElroy, Taslima Akter, Thomas C. McDermott, Damian A. Mooney American Institute of Chemical Engineers
6 国際会議録 Kinetic Monte Carlo Simulation of the Flux Dependence of Semiconductor Quantum Dot Growth C. Zhao, M. Zhao, Y. Wang, A.J. Lv, G.M. Wu Trans Tech Publications	12 国際会議録 Modeling and Monte Carlo simulation of nucleation and growth of UV/low-temperatureinduced nanostructures Flicstein,J., Pata,S., Chun,L.S.H.K., Palmier,J.F., Courant,J.L. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12