Determination of the Electrical Capture Process of the EH<sub>6</sub>-Center in n-Type 4H-SiC

Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

シリーズ名:

Materials science forum

シリーズ巻号:

740-742

発行年:

2013

開始ページ:

377

終了ページ:

380

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054223
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
回次:	9th
会議開催地:	St. Petersburg, Russian Federation
会議開催年:	2012.09.02-2012.09.06
論文注記:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

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1 国際会議録 Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ? B. Zippelius, A. Glas, H.B. Weber, G. Pensl, T. Kimoto Trans Tech Publications	7 国際会議録 Electrical Activation of B⁺-Ions Implanted into 4H-SiC T. Tsirimpis, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications
2 国際会議録 Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons S.A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno Trans Tech Publications	8 国際会議録 Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length B. Zippelius, M. Hauck, S. Beljakowa, H.B. Weber, M. Krieger Trans Tech Publications
3 国際会議録 Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy L. Trapaidze, R. Hollweck, S. Beljakowa, B. Zippelius, H.B. Weber Trans Tech Publications	9 国際会議録 Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers S. Beljakowa, S.A. Reshanov, B. Zippelius, M. Krieger, G. Pensl Trans Tech Publications
4 国際会議録 Iron-Related Defect Centers in 3C-SiC T. Tsirimpis, S. Beljakova, B. Zippelius, H.B. Weber, G. Pensl Trans Tech Publications	10 国際会議録 Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications
5 国際会議録 Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, B. Kallinger Trans Tech Publications	11 国際会議録 Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications
6 国際会議録 Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface M. Krieger, S. Beljakowa, B. Zippelius, V.V. Afanas'ev, A.J. Bauer Trans Tech Publications	12 国際会議録 Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC M. Obernhofer, M. Krieger, F. Schmid, H.B. Weber, G. Pensl, A. Schoerner Trans Tech Publications

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Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC

類似資料:

Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC