3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

著者名:

掲載資料名:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

シリーズ名:

Materials science forum

シリーズ巻号:

740-742

発行年:

2013

開始ページ:

257

終了ページ:

262

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054223
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
回次:	9th
会議開催地:	St. Petersburg, Russian Federation
会議開催年:	2012.09.02-2012.09.06
論文注記:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

類似資料:

1 国際会議録 Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates H. Jacobson, X. Li, E. Janzén, A. Henry Trans Tech Publications	7 国際会議録 Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001)8° Off-Axis Substrates and Homoepitaxial Films Bishop, S.M., Preble, E.A., Hallin, C., Henry, A., Sarney, W., Chang, H.-R., Storasta, L., Jacobson, H., Reitmeier, … Materials Research Society
2 国際会議録 CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates X. Li, S. Leone, S. Andersson, O. Kordina, A. Henry Trans Tech Publications	8 国際会議録 Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates K. Meguro, T. Narita, K. Noto, H. Nakazawa Trans Tech Publications
3 国際会議録 Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates A. Henry, S. Leone, F.C. Beyer, S. Andersson, O. Kordina Trans Tech Publications	9 国際会議録 Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates S. Leone, Y.C. Lin, F.C. Beyer, S. Andersson, H. Pedersen Trans Tech Publications
4 国際会議録 CVD Growth of 3C-SiC on 4H-SiC Substrate A. Henry, X. Li, S. Leone, O. Kordina, E. Janzén Trans Tech Publications	10 国際会議録 Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles S. Leone, H. Pedersen, F.C. Beyer, S. Andersson, O. Kordina Trans Tech Publications
5 国際会議録 Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization Bishop, S.M., Preble, E.A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., Wagner, B.P., Reitmeier, Z.J., Janzen, … Trans Tech Publications	11 国際会議録 Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI Chassagne, T., Ferro, G., Wang, H., Stoemenos, Y., Peyre, H., Contreras, S., Camassel, J., Monteil, Y., Ghyselen, B. Trans Tech Publications
6 国際会議録 Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate X. Li, E. Janzén, A. Henry Trans Tech Publications	12 国際会議録 Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI Chassagne, T., Ferro, G., Wang, H., Stoemenos, Y., Peyre, H., Contreras, S., Camassel, J., Monteil, Y., Ghyselen, B. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12