Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings

著者名:

掲載資料名:

Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

725

発行年:

2012

開始ページ:

27

終了ページ:

30

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054212
シリーズID:	PA00000012
会議名:	International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
回次:	14th
会議開催地:	Miyazaki, Japan
会議開催年:	2011.09.25-2011.09.29
論文注記:	14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan

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