Low Frequency Noise in 4H-SiC Lateral JFET Structures

Low Frequency Noise in 4H-SiC Lateral JFET Structures

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

473

終了ページ:

476

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise H.K. Chan, R.C. Stevens, J.P. Goss, N.G. Wright, A.B. Horsfall Trans Tech Publications	7 国際会議録 Optimisation of 4H-SiC MOSFET Structures for Logic Applications Horsfall, A.B., Prentice, C.H.A., Tappin, P., Bhatnagar, P., Wright, N.G., Vassilevslki, K.V., Nikitina, I.P. Trans Tech Publications
2 国際会議録 Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H Surface J.P. Goss, P.R. Briddon, N.G. Wright, A.B. Horsfall Trans Tech Publications	8 国際会議録 4.6 kV, 10.5 mOhm&×cm² Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications
3 国際会議録 Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors R.C. Stevens, K. Vasilevskiy, J.E. Lees, N.G. Wright, A.B. Horsfall Trans Tech Publications	9 国際会議録 Transition Metal Oxide-Diamond Interfaces for Electron Emission Applications A.K. Tiwari, J.P. Goss, P.R. Briddon, N.G. Wright, A.B. Horsfall Trans Tech Publications
4 国際会議録 Optimisation of a 4H-SiC Enhancement Mode Power JFET Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications	10 国際会議録 Influence of Intercalated Silicon on the Transport Properties of Graphene J.P. Goss, P.R. Briddon, V.K. Nagareddy, N.G. Wright, A.B. Horsfall Trans Tech Publications
5 国際会議録 Complementary JFET Logic for Low-Power Applications in Extreme Environments H. Habib, N.G. Wright, A.B. Horsfall Trans Tech Publications	11 国際会議録 Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, A.J. Smith Trans Tech Publications
6 国際会議録 Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces A.K. Tiwari, J.P. Goss, P. Briddon, N.G. Wright, A.B. Horsfall Trans Tech Publications	12 国際会議録 Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs Wright, N.G., Poolamai, N., Vassilevski, K.V., Horsfall, A.B., Johnson, C.M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12