Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers

Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

391

終了ページ:

394

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

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1 国際会議録 Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes J.D. Caldwell, R.E. Stahlbush, O.J. Glembocki, K.D. Hobart, K.X. Liu Trans Tech Publications	7 国際会議録 Influence of Temperature on the Saturation of the Forward Voltage Drift in SiC Pin Diodes J.D. Caldwell, R. Stahlbush, O. Glembocki, K. Hobart Electrochemical Society
2 国際会議録 Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers K.X. Liu, X. Zhang, R.E. Stahlbush, M. Skowronski, J.D. Caldwell Trans Tech Publications	8 国際会議録 Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC Joshua David Caldwell, Paul B. Klein, Orest J. Glembocki, Robert E. Stahlbush, Kendrick X. Liu, Karl D. Hobart, Fritz … Materials Research Society
3 国際会議録 On the Luminescence and Driving Force of Stacking Faults in 4H-SiC J.D. Caldwell, A.J. Giles, R.E. Stahlbush, M.G. Ancona, O.J. Glembocki Trans Tech Publications	9 国際会議録 Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation M.J. Tadjer, K.D. Hobart, R.E. Stahlbush, P.J. McMarr, H.L. Hughes Trans Tech Publications
4 国際会議録 Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes R.E. Stahlbush, Q.C.J. Zhang, A.K. Agarwal, N.A. Mahadik Trans Tech Publications	10 国際会議録 Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing M.J. Tadjer, N.A. Mahadik, B.N. Feigelson, R.E. Stahlbush, E.A. Imhoff Trans Tech Publications
5 国際会議録 Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, M.J. O'Loughlin, A.A. Burk Trans Tech Publications	11 国際会議録 Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy R.E. Stahlbush, N.A. Mahadik, M.J. O'Loughlin Trans Tech Publications
6 国際会議録 Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS Diodes Joshua David Caldwell, Robert E. Stahlbush, Eugene A. Imhoff, Orest J. Glembocki, Karl D. Hobart, Marko J. Tadjer, … Materials Research Society	12 国際会議録 Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy N.A. Mahadik, R.E. Stahlbush, S.B. Qadri, O.J. Glembocki, D.A. Alexson Trans Tech Publications

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