Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

343

終了ページ:

346

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

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1 国際会議録 The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC F.Z. Wu, M. Dudley, H.H. Wang, S. Byrappa, S. Sun Trans Tech Publications	7 国際会議録 Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC F.Z. Wu, H.H. Wang, Y. Yang, J.Q. Guo, B. Raghothamachar Trans Tech Publications
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6 国際会議録 Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method J.Q. Guo, Y. Yang, F.Z. Wu, J.J. Sumakeris, R.T. Leonard Trans Tech Publications	12 国際会議録 Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers Y. Yang, J. Guo, O.Y. Goue, B. Raghothamachar, M. Dudley Trans Tech Publications

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