High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers

High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

293

終了ページ:

296

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers L. Lilja, J. ul Hassan, I.D. Booker, P. Bergman, E. Janzén Trans Tech Publications	7 国際会議録 Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers L. Lilja, I. Farkas, I. Booker, J. ul Hassan, E. Janzén, J.P. Bergman Trans Tech Publications
2 国際会議録 The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers L. Lilja, J. Hassan, I.D. Booker, J.P. Bergman, E. Janzén Trans Tech Publications	8 国際会議録 Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC Magnusson, B., Bergman, J.P., Janzen, E. Trans Tech Publications
3 国際会議録 Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC J. Hassan, L. Lilja, I.D. Booker, J.P. Bergman, E. Janzén Trans Tech Publications	9 国際会議録 Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers I.D. Booker, J. Hassan, A. Hallén, E.Ö. Sveinbjörnsson, O. Kordina Trans Tech Publications
4 国際会議録 Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation J.P. Bergman, I.D. Booker, L. Lilja, J. Hassan, E. Janzén Trans Tech Publications	10 国際会議録 Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer R. Karhu, I. Booker, I.G. Ivanov, E. Janzén, J. Ul Hassan Trans Tech Publications
5 国際会議録 Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and µ-PCD B. Kallinger, M. Rommel, L. Lilja, J. Ul Hassan, I.D. Booker Trans Tech Publications	11 国際会議録 Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination A. Galeckas, H.M. Ayedh, J.P. Bergman, B.G. Svensson Trans Tech Publications
6 国際会議録 Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping J. Hassan, J.P. Bergman Trans Tech Publications	12 国際会議録 Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC Pozina, G., Bergman, J. P., Hemmingsson, A., Janzen, E. Trans Tech Publications

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