Z<sub>1/2</sub>- and EH<sub>6</sub>-Center in 4H-SiC: Not Identical Defects ?

Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ?

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

251

終了ページ:

254

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC J. Weber, S. Beljakowa, H.B. Weber, G. Pensl, B. Zippelius Trans Tech Publications	7 国際会議録 Electrical Activation of B⁺-Ions Implanted into 4H-SiC T. Tsirimpis, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications
2 国際会議録 Iron-Related Defect Centers in 3C-SiC T. Tsirimpis, S. Beljakova, B. Zippelius, H.B. Weber, G. Pensl Trans Tech Publications	8 国際会議録 Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications
3 国際会議録 Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient Klettke, O., Pensl, G., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps B. Zippelius, J. Suda, T. Kimoto Trans Tech Publications
4 国際会議録 Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, B. Kallinger Trans Tech Publications	10 国際会議録 Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons S.A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno Trans Tech Publications
5 国際会議録 Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications	11 国際会議録 Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC Frank, T., Weidner, M., Itoh, H., Pensl, G. Trans Tech Publications
6 国際会議録 Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy L. Trapaidze, R. Hollweck, S. Beljakowa, B. Zippelius, H.B. Weber Trans Tech Publications	12 国際会議録 MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation Yano, H., Kimoto, T., Matsunami, H., Bassler, M., Pensl, G. Trans Tech Publications

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Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?

類似資料:

Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ?