Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

211

終了ページ:

216

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

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1 国際会議録 Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates N.T. Son, P. Carlsson, A. Gällström, B. Magnusson, E. Janzén Trans Tech Publications	7 国際会議録 As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC Magnusson, B., Ellison, A., Carlsson, F.H.C., Son, N.T., Janzen, E. Trans Tech Publications
2 国際会議録 Identification of Niobium in 4H-SiC by EPR and Ab Initio* Studies* N.T. Son, V. Ivády, A. Gali, A. Gällström, S. Leone Trans Tech Publications	8 国際会議録 Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC I.G. Ivanov, A. Gällström, S. Leone, O. Kordina, N.T. Son Trans Tech Publications
3 国際会議録 Theory of Neutral Divacancy in SiC: A Defect for Spintronics A. Gali, A. Gällström, N.T. Son, E. Janzén Trans Tech Publications	9 国際会議録 Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC Zolnai, Z., Son, N.T., Magnusson, B., Hallin, C., Janzen, E. Trans Tech Publications
4 国際会議録 Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC Son, N.T., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Magnusson, B., Ellison, A., Morishita, N., Ohshima, T., Itoh, … Trans Tech Publications	10 国際会議録 Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC A. Gällström, B. Magnusson, E. Janzén Trans Tech Publications
5 国際会議録 The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC A. Gällström, B. Magnusson, A. Thuaire, P. PASKOV, A. Henry Trans Tech Publications	11 国際会議録 Intrinsic Defects in HPSI 6H-SiC: An EPR Study P. Carlsson, N.T. Son, B. Magnusson, A. Henry, E. Janzén Trans Tech Publications
6 国際会議録 Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC A. Gallstrorm, B. Magnusson, P. Carlsson, N.T. Son, A. Henry, F. Beyer, M. Syvajarvi, R. Yakimova, E. Janzen Trans Tech Publications	12 国際会議録 Deep-Level Luminescence at 1.0 eV in 6H SiC Magnusson, B., Ellison, A., Son, N.T., Janzen, E. Materials Research Society

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