Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles

Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

1

開始ページ:

113

終了ページ:

116

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates S. Leone, Y.C. Lin, F.C. Beyer, S. Andersson, H. Pedersen Trans Tech Publications	7 国際会議録 Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates A. Henry, S. Leone, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications
2 国際会議録 Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates A. Henry, S. Leone, F.C. Beyer, S. Andersson, O. Kordina Trans Tech Publications	8 国際会議録 Concentrated Chloride-Based Epitaxial Growth of 4H-SiC A. Henry, S. Leone, S. Andersson, O. Kordina, E. Janzén Trans Tech Publications
3 国際会議録 Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor H. Pedersen, S. Leone, A. Henry, F.C. Beyer, V. Darakchieva Trans Tech Publications	9 国際会議録 Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates M. Yazdanfar, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications
4 国際会議録 Chloride-Based CVD at High Growth Rates on 3″ Vicinal Off-Angles SiC Wafers S. Leone, A. Henry, O. Kordina, E. Janzén Trans Tech Publications	10 国際会議録 CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates X. Li, S. Leone, S. Andersson, O. Kordina, A. Henry Trans Tech Publications
5 国際会議録 Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén Trans Tech Publications	11 国際会議録 Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy F.C. Beyer, H. Pedersen, A. Henry, E. Janzen Trans Tech Publications
6 国際会議録 Chloride-Based SiC Epitaxial Growth H. Pedersen, S. Leone, A. Henry, F.C. Beyer, A. Lundskog Trans Tech Publications	12 国際会議録 Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition S. Leone, H. Pedersen, A. Henry, S.P. Rao, O. Kordina Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12