Epitaxial Growth of 4H-SiC Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 717-720
- 発行年:
- 2012
- パート:
- 1
- 開始ページ:
- 97
- 終了ページ:
- 100
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
国際会議録
Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |