Investigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaN

Investigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaN

著者名:

掲載資料名:

HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France

シリーズ名:

Materials science forum

シリーズ巻号:

711

発行年:

2012

開始ページ:

208

終了ページ:

212

総ページ数:

5

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054202
シリーズID:	PA00000012
会議名:	Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011)
回次:	4th
会議開催地:	Tours, France
会議開催年:	2011.06.27-2011.06.30
論文注記:	4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France

類似資料:

1 国際会議録 Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride N. Thierry-Jebali, O. Ménard, A. Yvon, E. Collard, M. Zhe Trans Tech Publications	7 国際会議録 Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry N. Thierry-Jebali, R. Chiriac, C. Brylinski Trans Tech Publications
2 国際会議録 Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations A. Souguir-Aouani, N. Thierry-Jebali, D. Tournier, A. Yvon, E. Collard Trans Tech Publications	8 国際会議録 Ti/Al and Cr/Al Ohmic Contacts to n-Type GaN Formed by Furnace Annealing Papanicolaou,N.A., Edwards,A., Rao,M.V., Mittereder,J.A., Anderson,W.T. Trans Tech Publications
3 国際会議録 Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire O. Menard, F. Cayrel, E. Collard, D. Alquier Trans Tech Publications	9 国際会議録 Temperature Behavior of Pt/Au Ohmic Contacts to p-GaN King, D. J., Zhang, L., Ramer, J. C., Hersee, S. D., Lester, L. F. MRS - Materials Research Society
4 国際会議録 Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact … N. Thierry-Jebali, M. Lazar, A. Vo-Ha, D. Carole, V. Soulière Trans Tech Publications	10 国際会議録 Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly PTyped Doped 4H-SiC Layer Selectively Grown by VLS Transport N. Thierry-Jebali, A. Vo-Ha, D. Carole, M. Lazar, G. Ferro Trans Tech Publications
5 国際会議録 SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices T. Chailloux, C. Calvez, N. Thierry-Jebali, D. Planson, D. Tournier Trans Tech Publications	11 国際会議録 Investigations of ohmic contacts to reactive ion-etched p-type GaN Parish, G., Watson, L.M., Membreno, G.U., Nener, B.D. SPIE - The International Society of Optical Engineering
6 国際会議録 Active Devices for Power Electronics: SiC vs III-N Compounds - The Case of Schottky Rectifiers C. Brylinski, O. Ménard, N. Thierry-Jebali, F. Cayrel, D. Alquier Trans Tech Publications	12 国際会議録 A Microstructural and Electrical Investigation of Pd/Ge/Ti/Au Ohmic Contact to n-Type GaAs Kwak, J. S., Baik, H. K., Kim, H., Lee, J.-L., Shin, D. W., Park, C. G. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12