Blank Cover Image

Performance of a GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an Electroless-Plated Treated Gate

著者名:
掲載資料名:
Frontier of nanoscience and technology : Selected, peer reviewed papers from the international conference on Frontier of Nanoscience and Technology (ICFNST 2011), held in Kunming, China, 28-29 September 2011
シリーズ名:
Materials science forum
シリーズ巻号:
694
発行年:
2011
開始ページ:
891
終了ページ:
895
総ページ数:
5
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 *MATERIALS AND DEVICE CHARACTERISTICS OF PSEUDOMORPHIC A1GaAS-InGaAs-GaAs AND A1 InAs-InGaAs-InP HIGH ELECTRON MOBILITY TRANSISTORS

Ballingall, J.M., Ho, Pin, Tessmer, G.J., Martin, P.A., Yu, T.H., Chao, P.C., Smith, P.M., Duh, K.H.G.

Materials Research Society
7 国際会議録 Effects of Strain Relaxation on the Carrier Transport Properties on InP-based Pseudomorphic High Electron Mobility Structures

Sandhu, R.S., Moore, C.D., Goorsky, M.S., Wong, L., Wang, K.L., Jiang, H., Chin, T.P., Wojtowicz, M., Block, T.R., …

Electrochemical Society
2 国際会議録 Performance on GaN-Based Light-Emitting Diodes with Different Substrate Tilt Angles

J.K. Liou, Y.J. Liu, S.Y. Cheng, P.C. Chou, C.C. Chen

Trans Tech Publications
8 国際会議録 IMPROVED HIGH BREAKDOWN VOLTAGE IN ALGAAS/GAAS HIGH ELECTRON MOBILITY TRANSISTOR BY NATIVE GATE OXIDES

CHENG, T. C. 1, CHANG, W. C. 1, YARN, K.F. 2

Electrochemical Society
3 国際会議録 InGaP/InGaAs Dual Gate Pseudomorphic High Electron Mobility Transistors

Lour, W.S., Tsai, M.K., Chen, K.C., Wu, Y.W., Tan, S.W., Yang, Y.J.

Electrochemical Society
9 国際会議録 High Performance InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors

Nobuhito Wakimura, Yugo Nakagawa, Hirohisa Taguchi, Tsutomu Iida, Yoshifumi Takanashi

Materials Research Society
4 国際会議録 Fabrication and Performance of Sub-Micron T-Gate High-Speed High-Electron Mobility Transistors

Weiner, J.S., Kuo, J.M., Lothian, J.R., Wang, Y.C., Ren, F., Tsai, H.S., Sivco, D., Cho, A.Y., Chen, Y.K.

Electrochemical Society
10 国際会議録 Ka-band monolithic GaAs PHEMT low-noise amplifiers for commercial wireless applications

Wang,H., Chen,T.H., Niu,D.C., Chan,Y.J., Kuo,P.W., Chou,H.S., Deng,K.L.

SPIE - The International Society for Optical Engineering
5 国際会議録 A High Power Enhancement- Mode Pseudomorphic High Electron Mobility Transistor With 2.5w Output Power and 64.5% Efficiency at 3V

Chen, S.H., Chang, E.Y., Lin, Y.C.

SPIE-The International Society for Optical Engineering
11 国際会議録 ZnO Nanorods Based Ammonia Gas Sensors with Interdigitized Electrodes

T.Y. Chen, J.S. Wu, C.S. Hsu, P.C. Chou, H.I. Chen

Trans Tech Publications
6 国際会議録 Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor

Sheng-Chun Hung, Byung Hwan Chu, Chih-Yang Chang, Chien Fong Lo, Ke-Hung Chen, S.J. Pearton, Amir Dabiran, P.P. Chow, …

Materials Research Society
12 国際会議録 Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT)

H. T. Wang, B. S. Kang, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. …

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12