Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
- 著者名:
- 掲載資料名:
- Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 679-680
- 発行年:
- 2011
- 開始ページ:
- 694
- 終了ページ:
- 697
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes
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Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes
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