1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

607

終了ページ:

612

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

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1 国際会議録 1360 V, 5.0 mΩcm² Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1) H. Kono, T. Suzuki, M. Mizukami, C. Ota, S. Harada Trans Tech Publications	7 国際会議録 Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well M. Okamoto, M. Iijima, T. Nagano, K. Fukuda, H. Okumura Trans Tech Publications
2 国際会議録 14.6 mΩcm² 3.3 kV DIMOSFET on 4H-SiC (000-1) H. Kono, M. Furukawa, K. Ariyoshi, T. Suzuki, Y. Tanaka Trans Tech Publications	8 国際会議録 Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1) T. Suzuki, J. Senzaki, T. Hatakeyama, K. Fukuda, T. Shinohe Trans Tech Publications
3 国際会議録 High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kojima, K., Suzuki, T. Trans Tech Publications	9 国際会議録 High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1o) Off-Angle Fukuda, K., Kato, M., Harada, S., Kojima, K. Trans Tech Publications
4 国際会議録 4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs Fukuda, K., Kato, M., Senzaki, J., Kojima, K., Suzuki, T. Trans Tech Publications	10 国際会議録 Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing Kosugi, R., Kiritani, N., Suzuki, K., Yatsuo, T., Adachi, K., Fukuda, K. Trans Tech Publications
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