Thermally-Assisted Tunneling Model for 3C-SiC p<sup>+</sup>-n Diodes

Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

シリーズ名:

Materials science forum

シリーズ巻号:

679-680

発行年:

2011

開始ページ:

571

終了ページ:

574

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054177
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
回次:	8th
会議開催地:	Oslo, Norway
会議開催年:	2010.08.29-2010.09.02
論文注記:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

類似資料:

1 国際会議録 Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications	7 国際会議録 Ionization Energies of Phosphorus Donors in 6H-SiC F. Schmid, K. Semmelroth, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications
2 国際会議録 Electrical Activation of B⁺-Ions Implanted into 4H-SiC T. Tsirimpis, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications	8 国際会議録 Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC J. Weber, S. Beljakowa, H.B. Weber, G. Pensl, B. Zippelius Trans Tech Publications
3 国際会議録 Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, B. Kallinger Trans Tech Publications	9 国際会議録 Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC M. Obernhofer, M. Krieger, F. Schmid, H.B. Weber, G. Pensl, A. Schoerner Trans Tech Publications
4 国際会議録 Iron-Related Defect Centers in 3C-SiC T. Tsirimpis, S. Beljakova, B. Zippelius, H.B. Weber, G. Pensl Trans Tech Publications	10 国際会議録 Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ? B. Zippelius, A. Glas, H.B. Weber, G. Pensl, T. Kimoto Trans Tech Publications
5 国際会議録 Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length B. Zippelius, M. Hauck, S. Beljakowa, H.B. Weber, M. Krieger Trans Tech Publications	11 国際会議録 Selenium and Tellurium Double Donors in SiC S.A. Reshanov, H.B. Weber, G. Pensl, A. Schoener, H. Nagasawa Trans Tech Publications
6 国際会議録 Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers S. Beljakowa, S.A. Reshanov, B. Zippelius, M. Krieger, G. Pensl Trans Tech Publications	12 国際会議録 Growth of 3C-SiC Bulk Material by the Modified Lely Method Semmelroth, K., Krieger, M., Pensl, G., Nagasawa, H., Puesche, R., Hundhausen, M., Ley, L., Nerding, M., Strunk, H.P. Trans Tech Publications

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Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes

類似資料:

Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes